Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers

This publication has 8 references indexed in Scilit:

• Optically pumped type-II interband terahertz lasers
  Applied Physics Letters, 1999
• 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
  IEEE Photonics Technology Letters, 1999
• Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
  Applied Physics Letters, 1999
• Carrier recombination rates in narrow-gap ${\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}}_{1-x}{\mathrm{In}}_x\mathrm{Sb}$-based superlattices
  Physical Review B, 1999
• Effects of internal loss on power efficiency of mid-infrared InAs-GaInSb-AlSb quantum-well lasers and comparison with InAsSb lasers
  IEEE Journal of Quantum Electronics, 1998
• Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations
  Applied Physics Letters, 1998
• Mid-infrared In1−xAlxSb/InSb heterostructure diode lasers
  Applied Physics Letters, 1997
• Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells
  Applied Physics Letters, 1997