Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling
- 30 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (22) , 1874-1876
- https://doi.org/10.1063/1.99610
Abstract
A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice mismatch as low as Δa/a≂3×10−4. The formation energy of misfit dislocations is estimated to be about 10−8 J/m.Keywords
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