Low-temperature epitaxial crystallization of amorphous GexSi1−x and NiSi2 layers on Si induced by ion irradiation
- 2 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 48 (1) , 453-456
- https://doi.org/10.1016/0168-583x(90)90159-r
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ion beam induced epitaxial crystallization of GexSi1−x/Si structuresApplied Physics Letters, 1989
- Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited SiApplied Physics Letters, 1988
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984