Ion beam induced epitaxial crystallization of GexSi1−x/Si structures
- 28 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9) , 843-845
- https://doi.org/10.1063/1.102264
Abstract
GexSi1−x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at −196 °C are shown to recrystallize epitaxially during subsequent ion irradiation at 275 °C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge0.1Si0.9 to Ge0.8Si0.2.Keywords
This publication has 6 references indexed in Scilit:
- Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited SiApplied Physics Letters, 1988
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Characterisation of MeV neon damage in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurementsApplied Physics Letters, 1980