Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si
- 26 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2605-2607
- https://doi.org/10.1063/1.100538
Abstract
The epitaxial crystallization of chemical vapor deposited Si layers on 〈100〉 Si substrates with a thin interfacial oxide layer was induced by a 600 keV Kr beam in the temperature range 350–500 °C. During irradiation the single crystal-amorphous interface velocity was measured in situ by monitoring the reflectivity of He-Ne laser light. We show that a critical irradiation dose is needed before the interfacial oxide breaks down and epitaxial regrowth can take place. This critical dose depends exponentially on the reciprocal temperature with an activation energy of 0.44 eV.Keywords
This publication has 12 references indexed in Scilit:
- Ion-beam-assisted growth of doped Si layersJournal of Materials Research, 1988
- Radiation-enhanced diffusion of Au in amorphous SiApplied Physics Letters, 1988
- Ion-induced epitaxial growth of chemical vapor deposited Si layersApplied Physics Letters, 1988
- Orientation and doping effects in ion beam annealing of α-siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Bandwidth limits due to incoherent soliton interaction in optical-fiber communication systemsPhysical Review A, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Ion-beam-induced migration and its effect on concentration profilesNuclear Instruments and Methods, 1980
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979