Shallow junction doping technologies for ULSI
- 1 October 1998
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 24 (1-2) , 1-80
- https://doi.org/10.1016/s0927-796x(98)00013-8
Abstract
No abstract availableKeywords
This publication has 172 references indexed in Scilit:
- Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantationJournal of Applied Physics, 1997
- Separation of plasma implantation of oxygen to form silicon on insulatorApplied Physics Letters, 1997
- Ultra-shallow p+-junction formation in silicon by excimer laser doping: a heat and mass transfer perspectiveInternational Journal of Heat and Mass Transfer, 1996
- Non-doping light impurities in silicon for solar cellsMaterials Science and Engineering B, 1996
- Influence of oxygen and nitrogen on point defect aggregation in silicon single crystalsMaterials Science and Engineering B, 1996
- Light impurities and their interactions in siliconMaterials Science and Engineering B, 1996
- An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabricationMicroelectronic Engineering, 1993
- Monte Carlo simulation of boron implantation into single-crystal siliconIEEE Transactions on Electron Devices, 1992
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974