Ultra-shallow p+-junction formation in silicon by excimer laser doping: a heat and mass transfer perspective

This publication has 16 references indexed in Scilit:

• An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication
  Microelectronic Engineering, 1993
• Generation of carrier concentrations as high as 5×1019 cm−3 in GaAs by Si doping using a KrF excimer laser
  Applied Physics Letters, 1992
• Shallow-junction formation on silicon by rapid thermal diffusion of impurities from a spin-on source
  IEEE Transactions on Electron Devices, 1992
• Excimer laser induced doping of phosphorus into silicon
  Journal of Applied Physics, 1990
• Damage removal/dopant diffusion tradeoffs in ultra-shallow implanted p/sup +/-n junctions
  IEEE Transactions on Electron Devices, 1990
• Enhanced tail diffusion of ion implanted boron in silicon
  Applied Physics Letters, 1987
• The impact of intrinsic series resistance on MOSFET scaling
  IEEE Transactions on Electron Devices, 1987
• Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon
  Applied Physics Letters, 1984
• Channeling effect of low energy boron implant in
  IEEE Electron Device Letters, 1983
• Electrical properties of laser chemically doped silicon
  Applied Physics Letters, 1981