Generation of carrier concentrations as high as 5×1019 cm−3 in GaAs by Si doping using a KrF excimer laser
- 7 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (23) , 2817-2819
- https://doi.org/10.1063/1.108047
Abstract
Extremely high carrier concentrations have been generated in GaAs by KrF excimer laser doping with Si using SiH4 gas. The carrier profile of the doped region shows a boxlike profile with a carrier concentration as high as 5×1019 cm−3 in a nonthermal equilibrium state and a depth of 170 nm. The formation of the nonthermal equilibrium state has a close connection with the transient melting and cooling process of the excimer laser doping. In addition, the thermal stability of the doped region by postannealing is investigated.Keywords
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