Improved temperature dependence of 1.3 µmAlGaInAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure
- 29 October 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (22) , 2130-2132
- https://doi.org/10.1049/el:19981461
Abstract
The threshold current Ith of 1.3 µm AlGaInAs devices increases by ~8% over a 1 GPa pressure range contrasting with decreases of 10–15% in 1.3 µm InGaAsP devices. This can be explained with 50% nonradiative recombination in InGaAsP and only ~20% in AlGaInAs devices, resulting in a much improved temperature dependence of Ith.Keywords
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