Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation
- 31 August 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (8) , 1485-1495
- https://doi.org/10.1016/0038-1101(94)00280-s
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Scattering matrix formulation of electron transport in compound semiconductor devicesSolid-State Electronics, 1994
- Spatially transient hot electron distributions in silicon determined from the chambers path integral solution of the Boltzmann transport equationSolid-State Electronics, 1993
- A generalized Legendre polynomial/sparse matrix approach for determining the distribution function in non-polar semiconductorsSolid-State Electronics, 1993
- Numerical simulation of non-homogeneous submicron semiconductor devices by a deterministic particle methodSolid-State Electronics, 1993
- Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equationSolid-State Electronics, 1993
- AN EFFICIENT SOLUTION OF THE MULTI‐BAND BOLTZMANN TRANSPORT EQUATION IN SILICONCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1993
- Formulation of the Boltzmann equation in terms of scattering matricesSolid-State Electronics, 1993
- Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1993
- Device modeling by deterministic self-consistent solution of Poisson and Boltzmann transport equationsSolid-State Electronics, 1992
- A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulationSolid-State Electronics, 1991