Interface morphology and relaxation in high temperature grown Si1 − xGexSi superlattices
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 52-56
- https://doi.org/10.1016/0022-0248(95)00371-1
Abstract
No abstract availableKeywords
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