Generic impulse response function for MOS systems and its application to linear response analysis
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1178-1185
- https://doi.org/10.1109/23.25436
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Interface state generation associated with hole transport in metal-oxide-semiconductor structuresJournal of Applied Physics, 1986
- Saturation of Threshold Voltage Shift in MOSFET's at High Total DoseIEEE Transactions on Nuclear Science, 1986
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate OxidationIEEE Transactions on Nuclear Science, 1983
- The Use of Low Energy X-Rays for Device Testing - A Comparison with Co-60 RadiationIEEE Transactions on Nuclear Science, 1983
- Ionization of SiO2 by Heavy Charged ParticlesIEEE Transactions on Nuclear Science, 1981
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Simple approximate solutions to continuous-time random-walk transportPhysical Review B, 1977
- Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient AnnealingIEEE Transactions on Nuclear Science, 1975