Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 35 (8) , 1203-1206
- https://doi.org/10.1109/3.777221
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Electron diffusion length and lifetime in p -type GaNApplied Physics Letters, 1998
- Investigation of the Leakage Current in GaN P-N JunctionsJapanese Journal of Applied Physics, 1998
- High-speed pin ultraviolet photodetectorsfabricated on GaNElectronics Letters, 1998
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- GaN (0001)-(1×1) surfaces: Composition and electronic propertiesJournal of Applied Physics, 1998
- Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour depositionElectronics Letters, 1998
- Changes in surface composition of GaN by impurity dopingThin Solid Films, 1996
- Unintentional hydrogenation of GaN and related alloys during processingJournal of Vacuum Science & Technology A, 1996
- Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Punch-through currents in P+NP+ and N+PN+ sandwich structures—I: Introduction and basic calculationsSolid-State Electronics, 1981