Impurity Gettering in MBE Grown Silicon
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Difficulties in Doping SiGe Alloys with Transition Metal Point DefectsPhysica Status Solidi (a), 1994
- Difficulties in Doping SiGe Alloys with Transition Metal Point DefectsPhysica Status Solidi (a), 1994
- Growth and characterization of compositionally graded, relaxed Si1-xGexPhysica Scripta, 1994
- Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickelApplied Physics Letters, 1988
- Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxyApplied Physics Letters, 1987
- A preliminary study of impurities and defects in Si-MBE layersJournal of Crystal Growth, 1987
- Extrinsic gettering via the controlled introduction of misfit dislocationsApplied Physics Letters, 1985