Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching
- 1 October 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (10) , 697-698
- https://doi.org/10.1109/68.60763
Abstract
Optical storage applications for AlGaAs power lasers require single-mode laser operation and well-controlled beam divergence. For AlGaAs GRIN separate confinement heterostructure (GRINSCH) ridge lasers, these optical characteristics are sensitive to the precise ridge geometry of the laser. Directional reactive ion etching with Cl/sub 2/ and in situ monitoring of the etch with highly attenuated laser interferometry provide the excellent process control required during formation of the ridge. The process is described, and results are presented for lasers that were fabricated using this technique.<>Keywords
This publication has 3 references indexed in Scilit:
- High-power ridge-waveguide AlGaAs GRIN-SCH laser diodeElectronics Letters, 1986
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- Optical applications of dielectric thin filmsReports on Progress in Physics, 1970