Diffusion barrier properties of TiW between Si and Cu
- 1 March 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (5) , 2301-2320
- https://doi.org/10.1063/1.353135
Abstract
100-nm-thick TiW (30 at. % Ti) films were used as diffusion barriers between silicon substrates and thin Cu films. Sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, transmission electron microscopy, scanning electron microscopy, and x-ray diffractometry indicated the absence of interdiffusion and structural change for unpatterned Si/TiW/Cu samples up to 775 °C if there was no exposure to air between TiW and Cu deposition and 850 °C if there was an exposure, respectively. Leakage current measurements showed no deterioration of diode junctions up to 725 °C for TiW without air exposure and 775 °C for air-exposed TiW.This publication has 53 references indexed in Scilit:
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