Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
- 10 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (19) , 2818-2820
- https://doi.org/10.1063/1.120145
Abstract
The optical properties of self-assembled InAs dots on InP have been measured by photoluminescence, and using a selective chemical etching of the InP cap layer, the geometrical properties of the same dots have been determined by atomic force microscopy. From the dot dimensions, the calculated (n=1) electron to heavy hole transition energies with a simple model are strongly correlated to the measured photoluminescence spectra. This technique allows a better understanding of the correlation between structural and optical properties of self-assembled dots.Keywords
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