On the formation of vacancy clusters in aluminium
- 1 August 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 16 (140) , 341-346
- https://doi.org/10.1080/14786436708229746
Abstract
The formation of vacancy clusters in a single crystal of zone-refined aluminium with a dislocation density 500 to 1000 lines per cm2, was studied during furnace heating and cooling between 218°C and 374°C by x-ray diffraction topography. The heating and cooling rate was approximately ½°C per sec. Black dots on the topographs, interpreted as dislocation loops in the crystal, were formed subsequent to both down-quenching and up-quenching when the vacancy supersaturation or inverse sub-saturation was sufficiently high. The critical supersaturation was 2·5±10% within the experimental uncertainty, and the critical inverse sub-saturation was somewhat higher. The clusters developed during growth into a dislocation network. When clusters were not formed, dislocation loops in rows were formed.Keywords
This publication has 15 references indexed in Scilit:
- Four-layer defects in quenched aluminiumPhilosophical Magazine, 1967
- Dislocation densities in slowly cooled aluminium single crystalsPhilosophical Magazine, 1966
- Zone Refining of AluminumReview of Scientific Instruments, 1963
- The nucleation of dislocation loops from vacanciesPhilosophical Magazine, 1962
- Diffusion of Al26 and Mn54 in AluminumJournal of Applied Physics, 1962
- On dislocations formed by the collapse of vacancy discsPhilosophical Magazine, 1960
- The projection topograph: a new method in X-ray diffraction microradiographyActa Crystallographica, 1959
- Dislocation loops in quenched aluminiumPhilosophical Magazine, 1958
- On the origin of dislocationsPhilosophical Magazine, 1958
- A method for the examination of crystal sections using penetrating characteristic X radiationActa Metallurgica, 1957