Electron-hole plasma dynamics in CdTe in the picosecond regime
- 15 December 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (18) , 12296-12303
- https://doi.org/10.1103/physrevb.40.12296
Abstract
The relaxation of photogenerated electron-hole plasmas is investigated in CdTe using time-resolved luminescence in the picosecond regime. The plasma temperature, the plasma density, and the band-gap renormalization are traced during the relaxation following the excitation pulse. Transient luminescence spectra are analyzed, first in a mostly used free-particle model and second, including carrier collision broadening calculated in the plasmon-pole approximation. The transient temperatures obtained with the second presumably correct model prove to be significantly lower. The plasma cooling is slowed down with increasing initial plasma density. The temperature decay is compared to plasma cooling theory including hot-phonon effects. The agreement is satisfactory for the densities ranging from 5× to 4× . Additionally, good agreement is found between our experimental results of band-gap shrinkage and theory. This work represents the first simultaneous test of several aspects of the electron-hole plasma theory including the many-body line-shape theory, the quasiparticle damping, the band-gap renormalization, and the plasma cooling kinetics.
This publication has 30 references indexed in Scilit:
- Hot-carrier energy-loss rates in GaAs/As quantum wellsPhysical Review B, 1988
- Picosecond Plasma Dynamics and All‐Optical Data ProcessingPhysica Status Solidi (b), 1988
- Cooling of hot carriers in Ga0.47In0.53AsApplied Physics Letters, 1987
- Mott transition for picosecond all-optical nor gate in CdSeSolid State Communications, 1986
- Plasma expansion and band-gap renormalization in CdTe and GaPJournal of Luminescence, 1985
- Plasma dynamics in GaAs under strong picosecond surface excitationJournal of Physics and Chemistry of Solids, 1985
- Time Dependence and Excitation-Intensity Dependence of Luminescence in CdTeJournal of the Physics Society Japan, 1984
- Thermalization of the Electron—Hole Plasma in GaAs.Physica Status Solidi (b), 1978
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973