Cooling of hot carriers in Ga0.47In0.53As
- 31 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (9) , 673-675
- https://doi.org/10.1063/1.98330
Abstract
Carrier cooling is measured in an Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure by time‐resolved photoluminescence experiments for excitation densities between 5×1016 and 2.2×1018 cm−3. For low excitation density, the energy‐loss rate by emission of optical phonons is close to theoretical bulk value, whereas a reduction of the energy‐loss rate by a factor of 100 is found for the highest excitation density.Keywords
This publication has 10 references indexed in Scilit:
- Heating of cold electrons by a warm GaAs lattice: A novel probe of the carrier-phonon interactionPhysical Review B, 1987
- Hot carrier-phonon interaction in three- and two-dimensional Ga0.47In0.53AsSolid State Communications, 1987
- Recombination-induced heating of free carriers in a semiconductorPhysical Review B, 1985
- Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studiesApplied Physics Letters, 1984
- Nonlinear carrier dynamics in GaxIn1−xAsyP1−y compoundsApplied Physics Letters, 1984
- Electronic power transfer in pulsed laser excitation of polar semiconductorsPhysical Review B, 1983
- Slowed picosecond kinetics of hot photogenerated carriers in GaAsSolid State Communications, 1982
- Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactionsSolid State Communications, 1981
- Screening of hot-carrier relaxation in highly photoexcited semiconductorsPhysical Review B, 1981
- Luminescence of High Density Electron-Hole Plasma in GaAsJournal of the Physics Society Japan, 1980