Hot carrier-phonon interaction in three- and two-dimensional Ga0.47In0.53As
- 30 April 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (1) , 53-56
- https://doi.org/10.1016/0038-1098(87)90083-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Dependence of electron temperature on well width in the Al0.48In0.52As/Ga0.47In0.53As single-quantum wellIEEE Journal of Quantum Electronics, 1986
- Spectroscopy of hot carriers in semiconductorsJournal of Luminescence, 1986
- Hot-Electron Relaxation in GaAs Quantum WellsPhysical Review Letters, 1985
- Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperatureApplied Physics A, 1985
- Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs HeterostructuresPhysical Review Letters, 1984
- Hot-carrier relaxation in photoexcited In0.53Ga0.47AsApplied Physics Letters, 1980
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978