Selective area chemical beam epitaxy of GaAs using Ga2O3 as a mask layer
- 2 November 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 169 (2) , 223-226
- https://doi.org/10.1016/s0022-0248(96)00385-5
Abstract
No abstract availableKeywords
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