Disorder dependence of ion implanted GaAs on the type of ion
- 1 December 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 203 (1-3) , 523-526
- https://doi.org/10.1016/0167-5087(82)90668-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Backscattering measurements of P+ implanted GaAs crystalsNuclear Instruments and Methods, 1980
- TEM structural studies on Se+implanted GaAsRadiation Effects, 1979
- Dechanneling by dislocations in ion-implanted AlPhysical Review B, 1978
- Channeling measurements of damage in ion bombarded semiconductors at 50° KRadiation Effects, 1976
- Infrared Localized-Vibrational-Mode Absorption of Ion-Implanted Aluminum and Phosphorous in Gallium ArsenideJournal of Applied Physics, 1971
- Radiation damage by implanted ions in GaAs and GaPRadiation Effects, 1970