Deep Levels in ZnSiP2 Determined by Schottky TSC Measurements
- 16 July 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 54 (1) , 315-320
- https://doi.org/10.1002/pssa.2210540139
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Metal–n-ZnSiP2 Schottky contactsPhysica Status Solidi (a), 1978
- Herstellung und ausgewählte physikalische Eigenschaften von ZnSiP2Crystal Research and Technology, 1978
- Conducting and semi-insulating n- and p-type ZnSiP2 single crystalsPhysica Status Solidi (a), 1976
- Study of trapping in mercuric iodide by thermally stimulated current measurementsJournal of Applied Physics, 1976
- Photoconductivity of ZnSiP2 near the absorption edgePhysica Status Solidi (a), 1975
- A constant-temperature method for evaluating deep-level parameters in Schottky-barrier TSC measurementsJournal of Physics D: Applied Physics, 1975
- Analysis of hall measurements on ZnSiP2Physica Status Solidi (a), 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Vergleichende Untersuchungen von Leitfähigkeitsglowkurven an CdS‐EinkristallenPhysica Status Solidi (b), 1963
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952