Optical nonlinearities in mixed type I–type II GaAs/AlAs multiple quantum wells
- 15 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (23) , 13499-13508
- https://doi.org/10.1103/physrevb.45.13499
Abstract
We demonstrate all-optical nonlinearities at low cw pump powers (mW/) using a GaAs/AlAs double-quantum-well design that spatially separates photoexcited electron-hole pairs. The nonlinearities are examined over a range of temperatures and in a variety of samples. Theoretical calculations based on many-body interactions are in good agreement with the measured spectra and have been used to improve the structure design.
Keywords
This publication has 25 references indexed in Scilit:
- Experimental study of the Γ-Xelectron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structuresPhysical Review B, 1990
- Many-body effects in the luminescence of highly excited indirect superlatticesJournal of the Optical Society of America B, 1990
- Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystalsOptical and Quantum Electronics, 1990
- Simplified calculations of the optical spectra of two- and three-dimensional laser-excited semiconductorsJournal of the Optical Society of America B, 1989
- Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wellsPhysical Review B, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Gain measurements and band-gap renormalization inmultiple-quantum-well structuresPhysical Review B, 1988
- The influence of dynamical correlations in semiconductor plasmas on optical spectraZeitschrift für Physik B Condensed Matter, 1988
- "Dressed Excitons" in a Multiple-Quantum-Well Structure: Evidence for an Optical Stark Effect with Femtosecond Response TimePhysical Review Letters, 1986
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984