Lateral confined epitaxy of GaN layers on Si substrates
- 25 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 230 (3-4) , 341-345
- https://doi.org/10.1016/s0022-0248(01)01247-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor depositionJournal of Crystal Growth, 1998
- Strength and toughness measurement of thin brittle coatings on substrates Part I. Theory and measurementThin Solid Films, 1993