Hopping conduction in phosphorus-doped silicon
- 27 September 1985
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (3) , 427-435
- https://doi.org/10.1080/13642818508240613
Abstract
Electrical resistivity and Hall effect have been measured on phosphorus-doped silicon with Compensation ratio K ranging from 0 to 0·98. The experimental results are analysed with a view to clarifying the mechanism of hopping conduction. By comparing the plots of resistivity versus temperature for these samples, it is suggested that the results can be interpreted in terms of variable-range hopping if one assumes structure around the Fermi level in the hopping band. The Hall effect observed in the region of hopping conduction is discussed on a percolative picture of hopping conduction.Keywords
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