Chemical beam epitaxy of HgCdTe
- 1 December 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (12C) , C10-C14
- https://doi.org/10.1088/0268-1242/6/12c/003
Abstract
The capability of chemical beam epitaxy to address the critical material issues of the growth and doping of Hg1-xCdxTe is discussed in conjunction with its advantages for enhanced compositional and growth rate control. The potential of this technique is demonstrated from a review of the electronic and photoconductive properties of narrow-bandgap alloys (x<0.3) and preliminary studies of the n-type iodine doping of CdTe.Keywords
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