AlGaN/GaN heterostructure field-effect transistor model including thermal effects
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (11) , 2031-2036
- https://doi.org/10.1109/16.877163
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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