Deposition of Thin Films of Gallium Sulfide from a Novel Single-Source Precursor, Ga(S2CNMeHex)3, by Low-Pressure Metal−Organic Chemical Vapor Deposition
- 1 December 1999
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 11 (12) , 3430-3432
- https://doi.org/10.1021/cm9905040
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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