Cross-Sectional Transmission Electron Microscopy Observations and Selected-Area Electron Diffractions of Interfaces of Epitaxially Grown Diamond Thin Films on Cubic Boron Nitride Substrates

This publication has 21 references indexed in Scilit:

• Young's modulus and Poisson's ratio of CVD diamond
  Diamond and Related Materials, 1993
• Elastic misfit stress relaxation in heteroepitaxial SiGe/Si mesa structures
  Applied Physics Letters, 1992
• Epitaxial growth of diamond thin films on foreign substrates
  Diamond and Related Materials, 1992
• Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method
  Japanese Journal of Applied Physics, 1990
• Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film
  Japanese Journal of Applied Physics, 1989
• Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures
  Journal of Materials Research, 1989
• Electrical Properties of Homoepitaxial Diamond Films
  MRS Proceedings, 1989
• Epitaxial growth of diamond on diamond substrate by plasma assisted CVD
  Applied Surface Science, 1988
• X-ray section topographs of a vapour-grown diamond film on a diamond substrate
  Thin Solid Films, 1987
• Structure of autoepitaxial diamond films
  Journal of Crystal Growth, 1975