A low-temperature process for annealing extremely shallow As+-implanted n+/p junctions in silicon
- 15 February 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 867-870
- https://doi.org/10.1063/1.333183
Abstract
A new low‐temperature process that anneals out ion‐implantation damage and activates the dopant in extremely shallow, implanted n+/p structures is presented. This technique employs low‐energy (0.4 keV) H+ ion implantation following arsenic ion implantation and then a subsequent low‐temperature (500–600 °C) furnace anneal. Very little dopant redistribution takes place with this new process and the device characteristics are comparable to other processes employing short‐time, higher‐temperature anneals.This publication has 10 references indexed in Scilit:
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