Oxidation behavior of Au-Si films
- 30 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (13) , 827-829
- https://doi.org/10.1063/1.98057
Abstract
We have investigated the oxidation behavior of co-deposited Au-Si films at low temperatures (∼200 °C). Alloys spanning the Au-Si phase diagram have been examined. Films with greater than 40 at. % Au were found to oxidize forming SiO2, while films with less than 40 at. % Au were found to be relatively stable in an oxidizing ambient. This phenomenon was used to form Au lines with a self-passivating SiO2 coating. The resistivity of these lines is estimated to be 6–10 μΩ cm.Keywords
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