Substitutional Donors and Core Excitons in Many-Valley Semiconductors
- 19 January 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (3) , 205-208
- https://doi.org/10.1103/physrevlett.46.205
Abstract
The shallow-deep instability of substitutional donors and core excitons is discussed, with inclusion of all intervalley interactions. Shallow levels result in Si for a screened point-charge potential, because intervalley overlap and kinetic energy balance the potential-energy terms, which are severely reduced, at substitutional sites, by umklapp effects. Contrary to recent claims based on consideration of potential energy only, many-valley interactions cannot therefore be invoked to predict deep core-exciton levels in Si.Keywords
This publication has 12 references indexed in Scilit:
- Shallow-Deep Instabilities of Donor Impurity Levels and Excitons in Many-Valley SemiconductorsPhysical Review Letters, 1980
- Why Muons and Protons are Deep Donors in Si and GePhysical Review Letters, 1979
- Binding energies of core excitons in semiconductorsIl Nuovo Cimento B (1971-1996), 1979
- Large binding due to dispersive screening and bloch function interference in many-valley semiconductorsSolid State Communications, 1979
- ?SR research in semiconductorsHyperfine Interactions, 1979
- II. SOLID STATE. SURFACE PHYSICS.THEORY OF CORE EXCITONS IN SOLIDSLe Journal de Physique Colloques, 1978
- Valley-orbit interaction and effective-mass theory for indirect gap semiconductorsJournal of Physics C: Solid State Physics, 1977
- Donor binding energies in multivalley semiconductorsJournal of Physics C: Solid State Physics, 1977
- A note on the many-valley effective mass theoryJournal of Physics C: Solid State Physics, 1977
- The Effective Mass Equation for the Multi-Valley SemiconductorsJournal of the Physics Society Japan, 1976