Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1348-1351
- https://doi.org/10.1109/iscas.1995.520396
Abstract
We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics.Keywords
This publication has 5 references indexed in Scilit:
- Distortion compensation of multi-MESFET circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Implementing high-order continuity and rate dependence in SPICE modelsIEE Proceedings - Circuits, Devices and Systems, 1994
- Intermodulation nulling in GaAs MESFETsElectronics Letters, 1993
- Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysisIEEE Transactions on Microwave Theory and Techniques, 1989
- Minimization of intermodulation distortion in GaAs MESFET small-signal amplifiersIEEE Transactions on Microwave Theory and Techniques, 1989