Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8B) , L966
- https://doi.org/10.1143/jjap.37.l966
Abstract
Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the axis of hexagonal GaN is parallel to the axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.Keywords
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