Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High-power InGaN single-quantum-well-structure blue and violet light-emitting diodesApplied Physics Letters, 1995
- The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium NitrideMRS Proceedings, 1995
- Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substratesJournal of Crystal Growth, 1994
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- On the origin of free carriers in high‐conducting n‐GaNCrystal Research and Technology, 1983
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973