Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layer
- 28 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 419-421
- https://doi.org/10.1063/1.104655
Abstract
By using the pulsed laser deposition technique, high‐temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single‐crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X‐ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c‐axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high‐temperature superconducting films on Si substrates.Keywords
This publication has 17 references indexed in Scilit:
- Growth of CoSi2 on Si(001): Structure, defects, and resistivityJournal of Vacuum Science & Technology A, 1990
- Low-temperature preparation of superconducting YBa2Cu3O7−δ films on Si, MgO, and SrTiO3 by thermal coevaporationApplied Physics Letters, 1988
- High T c YBa2Cu3O7−x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide targetApplied Physics Letters, 1988
- High-energy elastic backscattering of helium ions for compositional analysis of high-temperature superconductor thin filmsApplied Physics Letters, 1988
- Epitaxial Growth of Ba2YCu3Ox Thin Film on Epitaxial ZrO2/Si(100)Japanese Journal of Applied Physics, 1988
- Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporationApplied Physics Letters, 1988
- A semiautomatic algorithm for rutherford backscattering analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Specular Boundary Scattering and Electrical Transport in Single-Crystal Thin Films of CoPhysical Review Letters, 1985
- GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURESMRS Proceedings, 1985