A Study of Threshold and Incubation Behaviourduring Electromigration in thin Film Metallisation

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Abstract
We have previously described a microstructural model for electromigration in thin film metallisation, based on the concept of a stress-driven backwards flux opposing the forwards electromigration flux. The model can be used to calculate the build-up of stress in a metallisation track subject to arbitrary variations in electromigration flux, and to predict both the location of electromigration damage and incubation times before its appearance. In this paper we present an experimental study of electromigration behaviour in thin aluminium films on a niobium substrate and relate the results obtained to the model.