Measurement of stress gradients generated by electromigration
- 15 April 1977
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8) , 387-389
- https://doi.org/10.1063/1.89414
Abstract
Stress gradients generated by electromigration in aluminum films were measured at 340 °C. The stresses were measured by combining x‐ray topography to record the effects of the film stress and scanning electron microscopy to measure the information on the topographs. At the electromigration threshold the stress gradients of 200‐μm‐long stripes are 6×1010 dyn/cm3, corresponding to an effective charge of z*=−1.2.Keywords
This publication has 11 references indexed in Scilit:
- Stress generation by electromigrationApplied Physics Letters, 1976
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976
- Lateral self-diffusion and electromigration in thin metal filmsThin Solid Films, 1975
- Grain-boundary solute electromigration in polycrystalline filmsJournal of Applied Physics, 1974
- X-ray diffraction topographs of silicon crystals with superposed oxide film. III. Intensity distributionJournal of Applied Physics, 1973
- Diffusivity and Solubility of Si in the Al Metallization of Integrated CircuitsApplied Physics Letters, 1971
- X-Ray Stress Topography of Thin Films on Germanium and SiliconJournal of Applied Physics, 1968
- X-Ray Extinction Contrast Topography of Silicon Strained by Thin Surface FilmsJournal of Applied Physics, 1965
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Heat capacity and resistance measurements for aluminum and lead wiresActa Metallurgica, 1953