Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4SiH4H2
- 1 November 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 289 (1-2) , 227-233
- https://doi.org/10.1016/s0040-6090(96)08875-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education (BSR195-2443)
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