Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
- 28 January 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (2-3) , 537-541
- https://doi.org/10.1016/s0022-0248(99)00615-6
Abstract
No abstract availableKeywords
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