Self-organized superlattice formation in II–IV and III–V semiconductors

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Abstract
There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II–VI and III–V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.