Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better?
- 16 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25) , 3324-3326
- https://doi.org/10.1063/1.105720
Abstract
Molecular beam epitaxial growth of a normally homogeneous InAs0.5Sb0.5 alloy below 430 °C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a ‘‘natural’’ strained layer superlattice (n-SLS) with clearly defined interfaces modulated in the [001] growth direction. A description of the n-SLS growth mode in InAsSb is outlined, and the optical response of a n-SLS structure, which extends to 12.5 μm−considerably further than that of a homogeneous InAs0.5Sb0.5 layer (8.9 μm)−is reported.Keywords
This publication has 14 references indexed in Scilit:
- Growth of III-V compounds on vicinal planes by molecular beam epitaxySemiconductor Science and Technology, 1990
- MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μmSemiconductor Science and Technology, 1990
- Design of III-V quantum well structures for long-wavelength detector applicationsSemiconductor Science and Technology, 1990
- Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial LayersMRS Proceedings, 1989
- INTERFACE SPINODAL DECOMPOSITION IN LPE InxGa1-xAsyP1-y LATTICE MATCHED TO InPLe Journal de Physique Colloques, 1982
- Alloy Clustering inCompound Semiconductors Grown by Molecular Beam EpitaxyPhysical Review Letters, 1982
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Self‐Diffusion of Gallium in Gallium ArsenideJournal of the Electrochemical Society, 1981
- Photoactivation of CdSe Films for Photoelectrochemical CellsJournal of the Electrochemical Society, 1981
- OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYSCanadian Journal of Physics, 1964