MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μm
- 1 March 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (3S) , S24-S26
- https://doi.org/10.1088/0268-1242/5/3s/006
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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