Anomalous Sb redistribution during the preparation of delta-doping layers in silicon
- 15 August 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (4) , 2111-2116
- https://doi.org/10.1063/1.349447
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- X-ray reflectivity of an Sb delta-doping layer in siliconJournal of Applied Physics, 1990
- Structural characterization of an Sb delta-doping layer in siliconApplied Physics Letters, 1989
- Surface segregation mechanism during two-dimensional epitaxial growth: The case of dopants in Si and GaAs molecular-beam epitaxyJournal of Applied Physics, 1989
- MBE-Related Surface Segregation of Dopant Atoms in SiliconJapanese Journal of Applied Physics, 1988
- Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous SiPhysical Review Letters, 1988
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallizationApplied Physics Letters, 1982
- Model for solute redistribution during rapid solidificationJournal of Applied Physics, 1982
- Macroscopic theory of pulsed-laser annealing. II. Dopant diffusion and segregationPhysical Review B, 1981
- A MATHEMATICAL ANALYSIS OF SOLUTE REDISTRIBUTION DURING SOLIDIFICATIONCanadian Journal of Physics, 1955