Compositional dependence of electrical characteristics of SrBi2(Ta1−xNbx)2O9 thin-film capacitors

This publication has 19 references indexed in Scilit:

• Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitors
  Journal of Applied Physics, 1996
• Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications
  Applied Physics Letters, 1996
• Imprint of (Pb,La)(Zr,Ti)O3 thin films with various crystalline qualities
  Applied Physics Letters, 1996
• The temperature dependence of ferroelectric imprint
  Integrated Ferroelectrics, 1995
• The imprint mechanism in ferroelectric capacitors
  Integrated Ferroelectrics, 1995
• Characteristics of Bismuth Layered SrBi₂Ta₂O₉ Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O₃
  Japanese Journal of Applied Physics, 1995
• Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds
  Japanese Journal of Applied Physics, 1995
• Fatigue-free ferroelectric capacitors with platinum electrodes
  Nature, 1995
• Fatigue of ferroelectric PbZr_xTi_yO₃ capacitors with Ru and RuO_x electrodes
  Journal of Materials Research, 1993
• A family of ferroelectric bismuth compounds
  Journal of Physics and Chemistry of Solids, 1962