The control of the high-density microwave plasma for large-area electronics
- 1 January 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 337 (1-2) , 12-17
- https://doi.org/10.1016/s0040-6090(98)01167-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characteristics of a Large-Diameter Surface-Wave Mode Microwave-Induced PlasmaJapanese Journal of Applied Physics, 1998
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled PlasmaJapanese Journal of Applied Physics, 1997
- High rate deposition of μc-Si with plasma gun CVDJournal of Non-Crystalline Solids, 1996
- Enhanced optical absorption in microcrystalline siliconJournal of Non-Crystalline Solids, 1996
- Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH4 plasmaJournal of Non-Crystalline Solids, 1996
- New Ultra-High-Frequency Plasma Source for Large-Scale Etching ProcessesJapanese Journal of Applied Physics, 1995
- Spectroscopic Ellipsometry and Interference Reflectometry Measurements of CVD Silicon Grown on Oxidized SiliconMRS Proceedings, 1992
- A new type of high efficiency with a low-cost solar cell having the structure of a μc-SiC/polycrystalline silicon heterojunctionJournal of Applied Physics, 1990
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited PlasmaJapanese Journal of Applied Physics, 1987