Reflection electron-energy-loss investigation of the H-GaAs(110) surface
- 1 January 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (1) , 8-15
- https://doi.org/10.1103/physrevb.29.8
Abstract
Reflection energy-loss spectra have been performed on GaAs(110):H system at several stages of coverages. The fully chemisorbed surface shows several H-induced losses. They have been interpreted on the basis of hydride electronic structure and of self-consistent pseudopotential calculations. The results indicate that chemisorption takes place on both Ga and As sites of the unrelaxed substrate through covalent directional bonds.Keywords
This publication has 15 references indexed in Scilit:
- Dielectric properties of the Si(111)2×1 surface: Optical constants and the energy-loss spectrumPhysical Review B, 1983
- Theoretical investigation of hydrogen chemisorption on Ga-containing III–V compoundsJournal of Vacuum Science and Technology, 1982
- Hydrogen Adsorption on GaAs(110) Studied by Electron-Energy-Loss SpectroscopyPhysical Review Letters, 1981
- Energy-dependent electron-energy-loss spectroscopy: Application to the surface and bulk electronic structure of MgOPhysical Review B, 1980
- Electronic surface properties of Ga and In containing III–V compoundsJournal of Vacuum Science and Technology, 1977
- Kinetics of the generation of atomic hydrogen and its adsorption on Si(110)Journal of Vacuum Science and Technology, 1977
- Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)Surface Science, 1976
- Surface optical constants of silicon and germanium derived from electron-energy-loss spectroscopyPhysical Review B, 1975
- X-Ray Photoemission Cross-Section Modulation in Diamond, Silicon, Germanium, Methane, Silane, and GermanePhysical Review B, 1973
- Plasma Losses by Fast Electrons in Thin FilmsPhysical Review B, 1957