Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
- 14 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 879-881
- https://doi.org/10.1063/1.125616
Abstract
Room-temperature current–voltage characteristics of Si/Si1−xGex/Si p+-i-n+ interband tunneling diodes are presented. Special attention is paid to the peak current density (PCD) and the peak-to-valley current ratio (PVCR) of the devices. A variation of the SiGe layer width between 4 and 2 nm changes the PCD from 0.4 to 12.6 kA/cm2, at the same time conserving a PVCR of more than 4.1. The optimization of the Ge concentration x in the Si1−xGex layer results in a PVCR of 5.1 for x=48%. Tuning the position of the Si0.52Ge0.48 layer within the intrinsic zone culminates in a structure with a PCD of 8 kA/cm2 and improves the PVCR to the value of 5.45.Keywords
This publication has 10 references indexed in Scilit:
- High room temperature peak-to-valleycurrent ratio in Sibased Esaki diodesElectronics Letters, 1999
- Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodesApplied Physics Letters, 1998
- Digital circuit applications of resonant tunneling devicesProceedings of the IEEE, 1998
- Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1993
- Electron resonant tunneling in Si/SiGe double barrier diodesApplied Physics Letters, 1991
- Quantum well oscillatorsApplied Physics Letters, 1984
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- An alloy process for making high current density silicon tunnel diode junctionsSolid-State Electronics, 1965
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958